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Element(Hong Kong ) Technology
| Model： | RN4990(TE85L,F) |
|---|---|
| Product Category： | Bipolar Transistor Arrays, Pre-Biased |
| Manufacturer： | Toshiba Electronic Devices and Storage Corporation |
| Description： | NPN + PNP BRT Q |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| Quantity： | 13090 |
| RoHS Status： | |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$0.3333
$0.3333
10
$0.2323
$2.3230
100
$0.1212
$12.1200
500
$0.0909
$45.4500
1000
$0.0707
$70.7000
3000
$0.0606
$181.8000
6000
$0.0606
$363.6000
9000
$0.0505
$454.5000
30000
$0.0505
$1,515.0000
75000
$0.0404
$3,030.0000
150000
$0.0404
$6,060.0000
| TYPE | DESCRIPTION |
| Mfr | Toshiba Electronic Devices and Storage Corporation |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Frequency - Transition | 250MHz, 200MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Supplier Device Package | US6 |
