Language:en 
- zh-cn
- en
- ru
- fr
Element(Hong Kong ) Technology
| Model： | RN2427TE85LF |
|---|---|
| Product Category： | Single, Pre-Biased Bipolar Transistors |
| Manufacturer： | Toshiba Electronic Devices and Storage Corporation |
| Description： | TRANS PREBIAS P |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| Quantity： | 20830 |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$0.4545
$0.4545
10
$0.3232
$3.2320
100
$0.1616
$16.1600
500
$0.1414
$70.7000
1000
$0.1111
$111.1000
3000
$0.1010
$303.0000
6000
$0.1010
$606.0000
9000
$0.0909
$818.1000
30000
$0.0808
$2,424.0000
75000
$0.0707
$5,302.5000
| TYPE | DESCRIPTION |
| Mfr | Toshiba Electronic Devices and Storage Corporation |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 100mA, 1V |
| Supplier Device Package | S-Mini |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
