Language:en
  • zh-cn
  • en
  • ru
  • fr

Element(Hong Kong ) Technology

Product Details
  • image of IGBT Modules>NXH100T120L3Q0S1NG
  • image of IGBT Modules>NXH100T120L3Q0S1NG
Model NXH100T120L3Q0S1NG
Product Category IGBT Modules
Manufacturer Sanyo Semiconductor/onsemi
Description 1200V GEN III Q
Encapsulation -
Package Tray
Quantity 13024
RoHS Status 1
Obtain quotation information
Price: $61.1757
Inventory: 13024
Enter Quantity

Quantity

Price

Total Price

1

$61.1757

$61.1757

24

$55.6207

$1,334.8968

48

$53.7623

$2,580.5904

96

$50.0556

$4,805.3376

image of IGBT Modules>21575831
21575831
Model
21575831
Product Category
IGBT Modules
Manufacturer
Sanyo Semiconductor/onsemi
Description
1200V GEN III Q
Encapsulation
-
Package
Tray
Quantity
6524
lang_roHSStatusStatus
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Level Inverter
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 75A
NTC ThermistorYes
Supplier Device Package18-PIM/Q0PACK (55x32.5)
Current - Collector (Ic) (Max)54 A
Voltage - Collector Emitter Breakdown (Max)650 V
Power - Max122 W
Current - Collector Cutoff (Max)200 µA
Input Capacitance (Cies) @ Vce4877 pF @ 25 V
captcha

Service hours:9:00-18:00from Monday to Saturday
Please select online customer service:
+86-15869849588
0